Simulation of nonequilibrium thermal effects in power LDMOS transistors
نویسندگان
چکیده
منابع مشابه
Simulation of nonequilibrium thermal effects in power LDMOS transistors
The present work considers electrothermal simulation of LDMOS devices and associated nonequilibrium effects. Simulations have been performed on three kinds of LDMOS: bulk Si, partial SOI and full SOI. Differences between equilibrium and nonequilibrium modeling approaches are examined. The extent and significance of thermal nonequilibrium is determined from phonon temperature distributions obtai...
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This work addresses electro-thermal simulation of LDMOS devices and associated non-equilibrium effects. Simulations have been performed on three kinds of LDMOS i.e. bulk Si, partial SOI and SOI, with a view to compare the extent of non-equilibrium in each. Phonon temperature contours and electron energies were analyzed in each case. The results indicate that, under similar operating conditions,...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2003
ISSN: 0038-1101
DOI: 10.1016/s0038-1101(03)00066-2